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Generalized hyperbolic model for I-V characteristic of semiconductor devices

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dc.contributor.author PENIN, Alexandr
dc.contributor.author SIDORENKO, Anatoli
dc.date.accessioned 2024-01-05T09:38:02Z
dc.date.available 2024-01-05T09:38:02Z
dc.date.issued 2009
dc.identifier.citation PENIN, Alexandr, SIDORENKO, Anatoli. Generalized hyperbolic model for I-V characteristic of semiconductor devices. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 69-72. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25722
dc.description.abstract It is proposed to use the models of volt-ampere characteristics of semiconductor devices such as transistors and photovoltaic cells as a physically reasonable hyperbolic characteristic of the active two-pole with self-limitation of current. In this case, analytical calculation load regime is possible, which is important for the calculations in real time. This approach also allows determining the point of the characteristic regimes, comparing the effectiveness of current regimes. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject transistors en_US
dc.subject photovoltaic cells en_US
dc.subject semiconductor devices en_US
dc.title Generalized hyperbolic model for I-V characteristic of semiconductor devices en_US
dc.type Article en_US


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