Procedures for obtaining of semiconductors based on GaN:Mg

RUSU, Emil; URSACHI, Veaceslav; RAEVSCHI, Semion; MORARI, Vadim

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dc.contributor.author	RUSU, Emil
dc.contributor.author	URSACHI, Veaceslav
dc.contributor.author	RAEVSCHI, Semion
dc.contributor.author	MORARI, Vadim
dc.date.accessioned	2024-02-14T07:11:28Z
dc.date.available	2024-02-14T07:11:28Z
dc.date.issued	2020
dc.identifier.citation	RUSU, Emil et al. Procedures for obtaining of semiconductors based on GaN:Mg. In: European Exhibition of Creativity and Innovation: proc. of the 12th ed. EUROINVENT, Iasi, Romania, 2020, pp. 226-227. ISSN 2601-4564. e-ISSN 2601-4572.	en_US
dc.identifier.issn	2601-4564
dc.identifier.issn	2601-4572
dc.identifier.uri	http://repository.utm.md/handle/5014/26396
dc.description	Patent application: No.4618, 2019	en_US
dc.description	Class no. 5 - Industrial and laboratory equipments
dc.description.abstract	The process according to the invention consists in obtaining GaN nanoparticles and nanoparticles with pconductivity by means of chemical reactions of a chemical compound used as the source of gallium atoms and magnesium acetate Mg (CH3COO)2, or acetate tetrahydrate of magnesium (CH3COO)2 * 4H2O – as a source of magnesium atoms in the hydrothermal process, at the same time the concentration of the doping element being of (0.4-2.0)% wt.	en_US
dc.language	en
dc.language.iso	en	en_US
dc.publisher	Romanian Inventors Forum	en_US
dc.relation.ispartofseries	European Exhibition of Creativity and Innovation, EUROINVENT;12th ed., Iasi, Romania, 2020
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	invenţii	en_US
dc.subject	inventions	en_US
dc.subject	gallium nitride nanoparticles	en_US
dc.subject	semiconductors	en_US
dc.subject	magnesium acetate	en_US
dc.title	Procedures for obtaining of semiconductors based on GaN:Mg	en_US
dc.type	Article	en_US