Topological surface state in the thermoelectric properties of Bi2Te3 layers

Abstract

Using the new developed by us technology preparing single-crystal layers of topological insulator Bi2Te3 and Bi2Se3 , n and p-tip without substrate , we received layers with thickness 10-20 μm and with orientation the trigonal axis C3 perpendicular to the cleavage plane layers (according X-ray-diffraction studies).