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Excitonic states in layered semiconductor single crystals

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dc.contributor.author ZALAMAI, Victor
dc.contributor.author TIRON, Andrei
dc.contributor.author RUSU, Emil
dc.contributor.author STAMOV, Ivan
dc.date.accessioned 2024-04-25T06:12:58Z
dc.date.available 2024-04-25T06:12:58Z
dc.date.issued 2024
dc.identifier.citation ZALAMAI, Victor et al. Excitonic states in layered semiconductor single crystals. In: Quo Vadis – Ethics of the Scientific Research: conf. NANO-2024, event devoted to the 60th anniversary of the Technical University of Moldova, 15-18 April 2024, Chişinău, Republica Moldova: Program and proceedings of the conference, Chişinău 2024, p. 37. ISBN 978-9975-64-422-8. en_US
dc.identifier.isbn 978-9975-64-422-8
dc.identifier.uri http://repository.utm.md/handle/5014/26897
dc.description.abstract Optical properties of GaSe single crystals were investigated by measuring of reflection, transmission and photoluminescence spectra in wide temperature diapason 10 – 300 K. The parameters of three excitonic series for С1-V1, C2-V1 and С3-V1 bands were determined [2]. Layered SnSe demonstrate presence of A, B, C and D excitonic series in the minimum of interband interval. By analysis of low temperature reflection spectra of the excitons parameters (Rydberg constant, tramnslaiton and reduced effective masses) were determined. The effective masses of electrons and holes forming these excitons were also determined. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartofseries NANO-2024 "Quo Vadis – Ethics of the Scientific Research", event devoted to the 60th anniversary of the Technical University of Moldova;15-18 April 2024, Chişinău, Republica Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject single crystals en_US
dc.subject layered tin selenide en_US
dc.subject semiconductor single crystals en_US
dc.title Excitonic states in layered semiconductor single crystals en_US
dc.type Article en_US


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