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Browsing Conferinţa "Microelectronics and Computer Science" by Subject "nanowires"

Browsing Conferinţa "Microelectronics and Computer Science" by Subject "nanowires"

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  • Acoustic properties of cylindrical nanowires with the elastically dissimilar barriers 
    NIKA, Denis L.; POKATILOV, Evgenii P.; BALANDIN, Alexander A. (Technical University of Moldova, 2005)
    We have theoretically investigated the effect of the coating made of the elastically dissimilar material on the acoustic phonon properties of semiconductor nanowires. It is shown that the acoustic impedance mismatch at the ...
  • Acoustical properties of rectangular quantum heterowires with clamped outer surfaces 
    ZINCENCO, Nadejda D.; NIKA, Denis L.; Al-SABAYLEH, Moayad (Technical University of Moldova, 2005)
    We had been theoretically studied the acoustic phonon spectra and group velocities of the phonons in the rectangular GaN nanowire with clamped outer surfaces, covered with elastically dissimilar barriers. The elastic ...
  • Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube 
    BEJENARI, Igor; KANTSER, Valeriu (Technical University of Moldova, 2011)
    We study the electronic structure of a cylindrical nanotube made of a topological insulator Bi2Te3. The calculation was made in the framework of the kp theory near the Γ point of the surface Brilloiun zone. A band gap size ...
  • Features of luminescence in semiconductor quantum wires in external electric and magnetic fields 
    SINYAVSKY, Elerlange; KOSTYUKEVICH, Nina (Technical University of Moldova, 2017)
    The interband optical transitions in quantum wires in a model of a parabolic potential in an electric and magnetic field directed perpendicular to the nanowire axis are studied theoretically. The frequency dependences of ...
  • Magnesium and Cadmium-alloyed Zinc Oxide Nanowires for Device Applications 
    LUPAN, O.; CHOW, L.; RAILEAN, S.; SONTEA, V.; POCAZNOI, I. (Technical University of Moldova, 2011)
    We present an experimental approach to study Zn1-xMgxO and Zn1-xCdxO nanowires (NWs) and their integration in LED structures. Zn1-xMgxO and Zn1-xCdxO NWs were deposited on p- GaN substrates.
  • Photoluminescence of ZnTe nanowires prepared by electrochemical etching of bulk ZnTe 
    MONAICO, E.; COSEAC, V.; URSAKI, V.V.; SYRBU, N.N.; TIGINYANU, I.M. (Technical University of Moldova, 2009)
    We demonstrate the preparation of ZnTe nanowires with the diameter of 50 nm from bulk p-type ZnTe by means of electrochemical treatment in a pulse regime. The nanowires demonstrate photoluminescence characteristics identical ...
  • Quantum Interference and Surface States Effects in Topological Insulator Bi0.83Sb0.17 Nanowires 
    KONOPKO, Leonid; NIKOLAEVA, Albina; HUBER, Tito (Technical University of Moldova, 2017)
    We investigate the transport properties of topological insulator (TI) Bi0.83Sb0.17 nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 μm are prepared using high frequency liquid phase casting ...
  • Quantum size effect in semimetal bismuth antimony wires and films 
    NIKOLAEVA, Albina; KONOPKO, Leonid; GRABOV, Vladimir; DEMIDOV, Evghenii; KABLUKOVA, Natalia; KOMAROV, Vladimir; POPOV, Ivan (Tehnica UTM, 2014)
    — We present the experimental results of an investigation of the electron transport of semimetal single- crystal Bi1-xSbx films and wires in temperature range 4.2-300 K. Bi-3at.%Sb films were prepared by the vacuum discrete ...
  • Si, Ge and SiGe wires for sensor application 
    DRUZHININ, A. A.; KHOVERKO, Yu. M.; OSTROVSKII, I. P.; NICHKALO, S. I.; NIKOLAEVA, A. A.; KONOPKO, L. A.; STICH, I. (Technical University of Moldova, 2011)
    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 m. Ga- In gates were created ...
  • Topological Transitions in the Strain Dependences of Thermopower and Resistance in Nanowires Based on Bi –Sn 
    NIKOLAEVA, Albina A.; KONOPKO, Leonid A.; PARA, Gheorghe I.; TSURKAN, Ana K.; BOTNARY, Oxana V. (Technical University of Moldova, 2011)
    We studied the strain dependences of the resistance and thermopower of nanowires of Bi and its alloys with Sn in conditions of an anisotropic elastic strain with values of 2% elongation, which is one order of magnitude ...
  • Transport properties of a topological Insulator based on Bi0.83Sb0.17 nanowires 
    KONOPKO, Leonid; NIKOLAEVA, Albina; HUBER, Tito; ANSERMET, Jean-Philippe (Tehnica UTM, 2014)
    We have investigated the transport properties of topological insulator based on single-crystal Bi0.83Sb0.17 nanowires. The single-crystal nanowire samples in the diameter range 200 nm – 1.1 μm were prepared by the high ...

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