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Browsing Conferinţa "Microelectronics and Computer Science" by Subject "semiconductors"

Browsing Conferinţa "Microelectronics and Computer Science" by Subject "semiconductors"

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  • Autler–townes effect on the excitons and biexcitons in semiconductors 
    KHADZHI, P. I.; NADKIN, L. Yu.; TKACHENKO, D. V. (2005)
    The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M–band of luminescence and the test pulse in the exciton range of spectrum is investigated. ...
  • Chalcogenide semiconductors as gas sensors 
    TSIULYANU, Dumitru (Technical University of Moldova, 2005)
    A brief survey of experimental results to gas sensing with chalcogenide semiconductor based devices is given. It is pointed out that physical phenomena such as electrical conductivity can be coupled to chemical reactions ...
  • Influence of Metal Deposition on Electrochemical Impedance Spectra of Porous GaP and GaN Semiconductors 
    ANICAI, Liana; GOLGOVICI, Florentina; MONAICO, Eduard; URSAKI, Veaceslav; PRODANA, Mariana; ENACHESCU, Marius; TIGINYANU, Ion (Technical University of Moldova, 2017)
    A comparative analysis of electrochemical impedance spectroscopy (EIS) characterization is performed in porous GaN and GaP templates with and without metal nanostructured layers deposited by pulsed electroplating. The ...
  • Luminescent properties of triple semiconductors under the action of X rays 
    MACIUGA, A.; RADU, R.; PÎNTEA, V.; STRATAN, I.; NISTIRIUC, I. (Technical University of Moldova, 2005)
    This article focuses on the description of triple semiconductors of type, especially , and the researeh instalation over luminescent properties under the action of accelerated electrons and X-rays. VI III II C B A 4 2 4 2 S CdGa.
  • Mechanisms of enhancement of nonlinear optical response in nanostructured III-V compounds 
    SERGENTU, V.; KRAVETSKY, I.; URSAKI, V.; SIRBU, L.; VOLCIUC, O.; POPA, V.; TIGINYANU, I. M.; BOYD, Robert W. (Technical University of Moldova, 2005)
    The goal of this paper is to propose a new mechanism of nonlinear optical properties enhancement in nanostructured semiconductors based on the concept of photonic crystals (PC). The photonic crystal is usually formed as a ...
  • Porous morphologies in Si, III-V and II-VI compounds: a comparative study 
    LANGA, S.; MONAICO, E.; FÖLL, H.; TIGINYANU, I.M. (Technical University of Moldova, 2009)
    Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. ...
  • Preparation and optical characterization of the new polymer nanocomposites 
    ANDRIESH, A.; BIVOL, V.; BUZURNIUC, S.; MESHALCHIN, A.; ROBU, S.; VERLAN, V. (Technical University of Moldova, 2005)
    The polymer nanocomposites consisting of polyvinylalcohol (PVA) and chalcogenide non-crystalline semiconductors (ChNS) as arsenic selenide (As2Se3) and arsenic sulfide (As2S3) were obtained. The optical absorption was ...
  • Propagation of laser radiation in nonlinear coupler in the case of two-photon excitation of biexcitons 
    KHADZHI, Piotr; KOROVAI, Olesya; NOSENKO, Olga; KORDONSKAYA, Nadejda (Technical University of Moldova, 2005)
    The propagation peculiarities of coherent laser radiation in two identical semiconductor waveguides are investigated. The system of the nonlinear differential equations is derived, which describes the intensity of propagating ...
  • Spin-splitted states and spin hall effect induced by polarization in semiconductors structures 
    KANTSER, V. G.; ARAPAN, S.; BYRLIBA, G.; CYRLIG, S. (Technical University of Moldova, 2005)
    A new terms of SOI induced by interband interaction through the electrical polarization or atomic displacement like optical phonons are proposed and analyzed. These SOI mechanisms have the physical nature in the relativistic ...
  • Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K 
    ARAMĂ, E.; GHEORGHIŢĂ, E.; PÎNTEA, V. (Technical University of Moldova, 2009)
    In this article on the describe structure spectrum of radiation polities of 2 4 ZnIn S at 80 K relative thickness of plaque. Is proposed the optical transition energy for recombination holder with unbalanced load levels ...

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