IRTUM – Institutional Repository of the Technical University of Moldova

Comparative Study of Persistent Photoconductivity in GaP and GaN Nanostructures

Show simple item record

dc.contributor.author POSTOLACHE, Vitalie
dc.date.accessioned 2019-10-07T10:49:22Z
dc.date.available 2019-10-07T10:49:22Z
dc.date.issued 2013
dc.identifier.citation POSTOLACHE, Vitalie. Comparative Study of Persistent Photoconductivity in GaP and GaN Nanostructures. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 301-306. ISBN 978-9975-62-343-8. en_US
dc.identifier.isbn 978-9975-62-343-8
dc.identifier.uri http://repository.utm.md/handle/5014/4628
dc.description.abstract Relaxation of photoconductivity is investigated in bulk GaP and GaN substrates and epitaxial layers as compared to porous GaP samples and GaN nanomembranes. Porous GaP samples with different characteristic sizes of pores and walls are produced by electrochemical treatment in substrates with different carrier concentrations, while GaN nanomembranes are produced by means of surface charge lithography. It was found that different mechanisms are responsible for persistent photoconductivity in nanostructured GaP and GaN. The photoelectrical properties of bulk and nanoporous GaP are explained on the basis of randomly distributed potential barriers due to the high Te doping level and partial compensation in bulk samples and by a porosity controlled potential barriers pattern in porous samples. Metastable defects were found to be responsible for the persistent photoconductivity in both bulk GaN layers and nanomembrane. Enhancement of the optical quenching of persistent photoconductivity was observed in GaN nanomembranes. The possible nature of point defects responsible for these effects is discussed. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanostructures en_US
dc.subject nanomebranes en_US
dc.subject persistent photoconductivity en_US
dc.subject optical quenching en_US
dc.subject nanomebrane en_US
dc.subject fotoconductivitate persistentă en_US
dc.subject stingere optică en_US
dc.subject nanostructuri en_US
dc.title Comparative Study of Persistent Photoconductivity in GaP and GaN Nanostructures en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Browse

My Account