Tunable laser diodes on the basis of III-V heterostructures

Abstract

This paper describes the fabrication technique and operating characteristics of tunable sources on the basis of III-V with central emission wavelength 835nm and 980 nm. The laser diodes were realized using gain-guided AlGaAs/GaAs single quantum well and ridge-waveguide InGaAs/AlGaAs/GaAs multiquantum well heterostructures. Two type of design: two-section-single-cavity (TSSC) and cleaved-coupled-cavity (C3) tunable laser diodes were made. The two sections of laser diode were obtained by photolithography and chemical etching frontal Au contact layer, width isolated stripe between sections is 4-5 μm. The coupled cavity was formed by cleaving the laser diode chips in two parts. The cleaved sections held together by the contact metals, were then indium soldered "p-side up" to a copper heat sink for CW operation. The emission spectra of 835 nm and 980 nm C3 laser diodes are presented.