Angle dependence of the magnetoresistance in bi nanowires

KONOPKO, Leonid; NIKOLAEVA, Albina; HUBER, Tito; ROGACKI, Krzysztof

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dc.contributor.author	KONOPKO, Leonid
dc.contributor.author	NIKOLAEVA, Albina
dc.contributor.author	HUBER, Tito
dc.contributor.author	ROGACKI, Krzysztof
dc.date.accessioned	2019-10-31T12:39:37Z
dc.date.available	2019-10-31T12:39:37Z
dc.date.issued	2019
dc.identifier.citation	KONOPKO, Leonid, NIKOLAEVA, Albina, HUBER, Tito, ROGACKI, Krzysztof. Angle dependence of the magnetoresistance in bi nanowires. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p.64. ISBN 978-9975-108-84-3.	en_US
dc.identifier.isbn	978-9975-108-84-3
dc.identifier.uri	http://repository.utm.md/handle/5014/5779
dc.description	Abstract	en_US
dc.description.abstract	Bulk bismuth has been classified as a trivial topological insulator (TI) where the surface states do not have topological protection. Still, the electronic mobility of surface states is exceptionally large. This is not surprising if we consider that bulk Bi can be assembled by stacking bilayers, and that the bilayer of Bi is thought to represent a two dimensional TI that supports edge modes propagating along the perimeter of the sample, modes that exhibit coherent propagation and suppression of backscattering.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	topological insulator	en_US
dc.subject	Bi bilayers	en_US
dc.subject	quantum size effect	en_US
dc.title	Angle dependence of the magnetoresistance in bi nanowires	en_US
dc.type	Article	en_US