dc.contributor.author | SIMANDAN, I. D. | |
dc.contributor.author | GALCA, A. C. | |
dc.contributor.author | SAVA, F. | |
dc.contributor.author | BUCUR, C. | |
dc.contributor.author | DUMITRU, V. | |
dc.contributor.author | POROSNICU, C. | |
dc.contributor.author | MIHAI, C. | |
dc.contributor.author | VELEA, A. | |
dc.date.accessioned | 2019-11-04T10:48:34Z | |
dc.date.available | 2019-11-04T10:48:34Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | SIMANDAN, I. D., GALCA, A. C., SAVA, F. et al. Structural and optical properties of amorphous GeTe films. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, p. 43. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/5979 | |
dc.description | Abstract | en_US |
dc.description.abstract | Chalcogenide amorphous materials are known to have different structural and optical properties depending on the deposition method. Here, we investigate thin amorphous GeTe films [1] obtained through co-sputtering from two distinct Ge and Te targets and by pulsed laser deposition (PLD) from a polycrystalline GeTe target. The formation of a single and homogeneous amorphous GeTe phase by co-deposition is uncertain since we can have mixtures of monoelemental nanoclusters. In order to refine the homogeneity of the amorphous phase during co-sputtering, the temperature of the substrate was increased from room temperature up to 180 °C. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | amorphous materials | en_US |
dc.subject | films | en_US |
dc.title | Structural and optical properties of amorphous GeTe films | en_US |
dc.type | Article | en_US |
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