dc.contributor.author | BARBASHOV, V. M. | |
dc.contributor.author | TRUSHKIN, N. S. | |
dc.contributor.author | OSIPOV, A. K. | |
dc.date.accessioned | 2020-05-31T12:43:13Z | |
dc.date.available | 2020-05-31T12:43:13Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | BARBASHOV, V. M., TRUSHKIN, N. S., OSIPOV, A. K. Integral Estimate of LSI Radiation Hardness as a Fuzzy Number of Multiplicity of Nodes. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21 : Program & Abstract Book , 2019. Chişinău, 2019, p. 165. ISBN 978-9975-72-392-3. | en_US |
dc.identifier.isbn | 978-9975-72-392-3 | |
dc.identifier.uri | https://doi.org/10.1007/978-3-030-31866-6_144 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8515 | |
dc.description | Access full text - https://doi.org/10.1007/978-3-030-31866-6_144 | en_US |
dc.description.abstract | The analysis of the LSI behavior under radiation exposure at functional and logical level of description was carried out. It is shown that there are deterministic and non- deterministic failures typical when exposed to ionizing radiation. In the first case, the behavior of complex devices is determined by the specific ratio of the radiation-sensitive parameters of the elements, in the second case - the statistical variation of the failure threshold levels for the same type of samples. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | topological probabilistic models | en_US |
dc.subject | fuzzy probability | en_US |
dc.subject | uncertainty zone | en_US |
dc.title | Integral Estimate of LSI Radiation Hardness as a Fuzzy Number of Multiplicity of Nodes | en_US |
dc.type | Article | en_US |
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