dc.contributor.author | FÖLL, H. | |
dc.contributor.author | LANGA, S. | |
dc.contributor.author | CARSTENSEN, J. | |
dc.contributor.author | LÖLKES, S. | |
dc.contributor.author | CHRISTOPHERSEN, M. | |
dc.contributor.author | TIGINYANU, I. M | |
dc.date.accessioned | 2020-10-20T06:34:45Z | |
dc.date.available | 2020-10-20T06:34:45Z | |
dc.date.issued | 2003 | |
dc.identifier.citation | FÖLL, H., LANGA, S., CARSTENSEN, J. et al. Engineering porous III-Vs. In: III-Vs Review. 2003, V. 16, Nr. 7, pp. 42-43. ISSN 0961-1290. | en_US |
dc.identifier.uri | https://doi.org/10.1016/S0961-1290(03)00993-1 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/10818 | |
dc.description | Access full text - https://doi.org/10.1016/S0961-1290(03)00993-1 | en_US |
dc.description.abstract | Porous semiconductors exhibit new and unexpected properties compared to the bulk materials. In III-Vs, many, many new features with respect to optical properties have emerged during the last few years for certain pore morphologies. While pore etching is a complicated process, only poorly understood at present, it has a definite potential to produce materials with engineered properties. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | porous semiconductors | en_US |
dc.subject | semiconductors | en_US |
dc.subject | pore etching | en_US |
dc.title | Engineering porous III-Vs | en_US |
dc.type | Article | en_US |
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