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Luminescent and Photoconductive Properties of AgGa2.5In2.5S8 and CuGa2.5In2.5S8 New Semiconductors

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dc.contributor.author ANEDDA, A.
dc.contributor.author SERPI, A.
dc.contributor.author MOLDOVYAN, N. A.
dc.contributor.author TIGINYANU, I. M.
dc.contributor.author URSAKI, V. V.
dc.date.accessioned 2020-11-17T08:05:39Z
dc.date.available 2020-11-17T08:05:39Z
dc.date.issued 1993
dc.identifier.citation ANEDDA, A., SERPI, A., MOLDOVYAN, N. A. et al. Luminescent and Photoconductive Properties of AgGa2.5In2.5S8 and CuGa2.5In2.5S8 New Semiconductors. In: Japanese Journal of Applied Physics, 1993, V. 32, Nr. S3, pp. 466. ISSN 0021-4922. en_US
dc.identifier.uri https://doi.org/10.7567/jjaps.32s3.466
dc.identifier.uri http://repository.utm.md/handle/5014/11524
dc.description Access full text - https://doi.org/10.7567/jjaps.32s3.466 en_US
dc.description.abstract Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5S8 and CuGa2.5In2.5S8 single crystals are presented. The values of indirect (Egi=2.25 eV) and direct (Egd=2.60 eV, T=300 K) gaps in AgGa2.5In2.5S8 have been determined. PL spectrum of AgGa2.5In2.5S8 is shown to consist of two overlapping bands with the maxima at 1.57 and 1.95 eV (T=77 K), while CuGa2.5In2.5S8 is characterized by a single PL band, the position of its maximum (1.72–1.77 eV) depending upon the excitation power density. The radiative electron transitions in CuGa2.5In2.5S8 are assumed to occur from the quasicontinuously distributed traps below the bottom of the conduction band to an acceptor level with 0.07 eV activation energy. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject single crystals en_US
dc.subject crystals en_US
dc.subject photoluminescence en_US
dc.subject photoconductivity en_US
dc.subject photo-voltaic spectra en_US
dc.title Luminescent and Photoconductive Properties of AgGa2.5In2.5S8 and CuGa2.5In2.5S8 New Semiconductors en_US
dc.type Article en_US


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