GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium

SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T.

dc.contributor.author	SIDORENKO, A.
dc.contributor.author	PEISERT, H.
dc.contributor.author	NEUMANN, H.
dc.contributor.author	CHASSÉ, T.
dc.date.accessioned	2020-12-03T10:46:32Z
dc.date.available	2020-12-03T10:46:32Z
dc.date.issued	2006
dc.identifier.citation	SIDORENKO, A., PEISERT, H., NEUMANN, H. GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium. In: Applied Surface Science. 2006, V. 252, Nr. 21, pp. 7671-7677. ISSN 0169-4332.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.apsusc.2006.03.053
dc.identifier.uri	http://repository.utm.md/handle/5014/11914
dc.description	Access full text - https://doi.org/10.1016/j.apsusc.2006.03.053	en_US
dc.description.abstract	The growth of epitaxial GaN films on (0001)-sapphire has been investigated using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). In order to investigate the mechanism of the growth in detail, we have focused on the nitridation of pre-deposited Ga layers (droplets) using ion beam-assisted molecular beam epitaxy (IBA-MBE). Comparative analysis of XPS core-level spectra and LEED patterns reveals, that nitride films nucleate as epitaxial GaN islands. The wetting of the surface by GaN proceeds via reactive spreading of metallic Ga, supplied from the droplets. The discussed growth model confirms, that excess of metallic Ga is beneficial for GaN nucleation.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	epitaxial films	en_US
dc.subject	films	en_US
dc.subject	spectroscopy	en_US
dc.subject	electron diffractions	en_US
dc.subject	beam epitaxy	en_US
dc.title	GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium	en_US
dc.type	Article	en_US