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Birefringence of SnSe single crystals in excitonic and electronic transitions region

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dc.contributor.author ZALAMAI, V. V.
dc.contributor.author TIRON, A. V.
dc.contributor.author RUSU, E. V.
dc.contributor.author SYRBU, N. N.
dc.date.accessioned 2020-12-23T10:31:08Z
dc.date.available 2020-12-23T10:31:08Z
dc.date.issued 2019
dc.identifier.citation ZALAMAI, V. V., TIRON, A. V., RUSU, E. V. et al. Birefringence of SnSe single crystals in excitonic and electronic transitions region. In: Materials Research Express, 2019, V. 6, Nr. 12, pp. 125909. ISSN 2053-1591. en_US
dc.identifier.uri https://doi.org/10.1088/2053-1591/ab5f8a
dc.identifier.uri http://repository.utm.md/handle/5014/12284
dc.description Access full text - https://doi.org/10.1088/2053-1591/ab5f8a en_US
dc.description.abstract Absorption spectra in temperature range 300–10 K were studied. The minimal band gap A1 (1.091 eV at 300 K) is formed by direct allowed in E∣∣c polarization and forbidden in E∣∣a polarizations transitions. The next interval B1 (1.316 eV) is formed by direct transitions allowed in E∣∣a polarization and forbidden in E∣∣c polarization. Angular dependences of the electron transitions in the band gap minimum were investigated. Spectral dependences of refractive index (n) were calculated from wavelength modulation transmission (ΔT/Δλ) and reflection (ΔR/Δλ) spectra in the region of direct electron transitions. The absorption edge shifts to higher energies with temperature decreasing, and temperature coefficient of edge absorption shift (β) is 3.4 × 10−3 eV K−1. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject absorption spectra en_US
dc.subject spectra en_US
dc.subject polarizations transitions en_US
dc.subject electron transitions en_US
dc.title Birefringence of SnSe single crystals in excitonic and electronic transitions region en_US
dc.type Article en_US


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