RTP Diffusion and Junction Formation in Si and GaAs

SHISHIYANU, S.

dc.contributor.author	SHISHIYANU, S.
dc.date.accessioned	2021-01-12T09:55:23Z
dc.date.available	2021-01-12T09:55:23Z
dc.date.issued	2006
dc.identifier.citation	SHISHIYANU, S. RTP Diffusion and Junction Formation in Si and GaAs. In: International Conference on Advanced Thermal Processing of Semiconductors: proceedings 14th IEEE Conference, 11-13 Oct. 2006, Kyoto, Japan, 2006, pp. 199-204.	en_US
dc.identifier.uri	https://doi.org/10.1109/RTP.2006.368000
dc.identifier.uri	http://repository.utm.md/handle/5014/12411
dc.description	The investigation results of the RTP enhanced diffusion of P in Si and Zn in GaAs, the mechanism, models and the role of quantum effects are presented in this paper. Shallow and ultra-shallow p + -n, n - -p junctions have been obtained and analyzed. The experimental concentration profiles were simulated based on the dissociative diffusion mechanism. The diffusion coefficients and activation energies of the RTP enhanced diffusion and conventional furnace annealing was analyzed. The activation energy of RTP diffusion is lower than the conventional furnace diffusion and diffusion coefficient is higher by 1-3 order of magnitude. The p-n junctions with depth of 0.02 - 0.4 mum have been obtained by RTP for 0.1 - 3min diffusion time.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	diffusion	en_US
dc.subject	quantum effects	en_US
dc.title	RTP Diffusion and Junction Formation in Si and GaAs	en_US
dc.type	Article	en_US