RTD-based THz-MIC by Film-Diode technology

COJOCARI, Oleg; SYDLO, Cezary; FEIGINOV, Michael; MEISSNER, Peter

dc.contributor.author	COJOCARI, Oleg
dc.contributor.author	SYDLO, Cezary
dc.contributor.author	FEIGINOV, Michael
dc.contributor.author	MEISSNER, Peter
dc.date.accessioned	2021-01-19T11:32:58Z
dc.date.available	2021-01-19T11:32:58Z
dc.date.issued	2012
dc.identifier.citation	COJOCARI, Oleg, SYDLO, Cezary, FEIGINOV, Michael et al. RTD-based THz-MIC by Film-Diode technology. In: IEEE/MTT-S International Microwave Symposium Digest: proceedings 17-22 June 2012, Montreal, Canada, 2012, p. 1-3. ISBN 978-1-4673-1088-8.	en_US
dc.identifier.isbn	978-1-4673-1088-8
dc.identifier.uri	https://doi.org/10.1109/MWSYM.2012.6259589
dc.identifier.uri	http://repository.utm.md/handle/5014/12493
dc.description	Acces full text: https://doi.org/10.1109/MWSYM.2012.6259589	en_US
dc.description.abstract	This work aims at development of extremely compact and low-cost THz sources. Resonant-tunneling diode (RTD) is monolithically integrated with planar resonator and Vivaldi antenna on transferred membrane-substrate by Film-Diode (FD) process. The highest obtained oscillation-frequency is 1111GHz. This is the highest frequency RTD-based oscillator reported so far, and the highest-frequency Terahertz Monolithic Integrated Circuit (THz-MIC) realized so far by FD-technology.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	resonant tunnelling diodes	en_US
dc.subject	tunnelling diodes	en_US
dc.subject	diodes	en_US
dc.subject	oscillators	en_US
dc.subject	integrated circuits	en_US
dc.title	RTD-based THz-MIC by Film-Diode technology	en_US
dc.type	Article	en_US