Concentration induced damping of gas sensitivity in ultrathin tellurium films

TSIULYANU, D.; MOCREAC, O.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	MOCREAC, O.
dc.date.accessioned	2021-01-21T15:16:00Z
dc.date.available	2021-01-21T15:16:00Z
dc.date.issued	2013
dc.identifier.citation	TSIULYANU, D., MOCREAC, O. Concentration induced damping of gas sensitivity in ultrathin tellurium films. In: Sensors and Actuators B: Chemical. 2013, vol. 177, pp. 1128-1133. ISSN 0925-4005.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.snb.2012.12.022
dc.identifier.uri	http://repository.utm.md/handle/5014/12531
dc.description	Access full text - https://doi.org/10.1016/j.snb.2012.12.022	en_US
dc.description.abstract	The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be in amorphous state. Sensitivity of 30nm thickness Te film decreases near linearly with concentration increase between 150 and 500ppb of nitrogen dioxide. Results are explained in terms of formation of a nitrogen dioxide catalytic gate in which a molecule adsorbs (and desorbs) without reacting.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gas sensitivity	en_US
dc.subject	damping	en_US
dc.subject	tellurium	en_US
dc.subject	ultrathin layers	en_US
dc.subject	layers	en_US
dc.title	Concentration induced damping of gas sensitivity in ultrathin tellurium films	en_US
dc.type	Article	en_US