Numerical simulation of the amplification of picosecond laser pulses in tapered semiconductor amplifiers and comparison with experimental results

TRONCIU, V. Z.; SCHWERTFEGER, S.; RADZIUNAS, M.; KLEHR, A.; BANDELOW, U.; WENZEL, H.

dc.contributor.author	TRONCIU, V. Z.
dc.contributor.author	SCHWERTFEGER, S.
dc.contributor.author	RADZIUNAS, M.
dc.contributor.author	KLEHR, A.
dc.contributor.author	BANDELOW, U.
dc.contributor.author	WENZEL, H.
dc.date.accessioned	2021-04-02T07:24:30Z
dc.date.available	2021-04-02T07:24:30Z
dc.date.issued	2012
dc.identifier.citation	TRONCIU, V. Z., SCHWERTFEGER, S., RADZIUNAS, M. et al. Numerical simulation of the amplification of picosecond laser pulses in tapered semiconductor amplifiers and comparison with experimental results. In: Optics Communications. 2012, V. 285, N. 12, pp. 2897-2904. ISSN‎: 0030-4018.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.optcom.2012.02.036
dc.identifier.uri	http://repository.utm.md/handle/5014/13994
dc.description	Access full text - https://doi.org/10.1016/j.optcom.2012.02.036	en_US
dc.description.abstract	We apply a traveling wave model to the simulation of the amplification of laser pulses generated by Q-switched or mode-locked distributed-Bragg reflector lasers. The power amplifier monolithically integrates a ridge-waveguide section acting as pre-amplifier and a flared gain-region amplifier. The diffraction limited and spectral-narrow band pulses injected in to the pre-amplifier have durations between 10ps and 100ps and a peak power of typical 1W. After the amplifier, the pulses reach a peak power of several tens of Watts preserving the spatial, spectral and temporal properties of the input pulse. We report results obtained by a numerical solution of the traveling-wave equations and compare them with experimental investigations. The peak powers obtained experimentally are in good agreement with the theoretical predictions. The performance of the power amplifier is evaluated by considering the dependence of the pulse energy as a function of different device and material parameters.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	picosecond pulses	en_US
dc.subject	semiconductor amplifiers	en_US
dc.subject	traveling waves	en_US
dc.subject	waves	en_US
dc.subject	laser pulses	en_US
dc.subject	waveguides	en_US
dc.title	Numerical simulation of the amplification of picosecond laser pulses in tapered semiconductor amplifiers and comparison with experimental results	en_US
dc.type	Article	en_US