Quadrant detector based on InGaAsP heterostructures

Abstract

A new device called selective quadrant-detector, realized on the basis of InGaAsP heterostructures, is presented in the paper. It consists of a circular photodiode-quadrant with protective peripheric ring, having selective sensibility optimized for (lambda) equals 1.06 micrometers , in the center of which a photodetector integrated in the same crystal is formed. The photodetector has own capacity C equals 1 - 5 pF and can be used for receiving the high frequency (f > 1 GHz) optic signals and the small duration (t <EQ 1 ns) unitary signals. The presence of central photodetector decreases the coordinate characteristic abruptness (K equals 8(DOT)103 V(DOT)W-1(DOT)mm-1(and photocurrent intensity with 8 - 10%. Absolute spectral sensibility is S(lambda equals1.06) equals 0.57 A/W and photosensibility spectrum semiwidth is (Delta) (lambda) <EQ 100 nm.