Process for obtaining of semiconductor nanowires in one step via anodization

Abstract

Herein, we propose the technological route via electrochemical etching of bulk GaAs, GaP, and InP substrates for obtaining of a network of semiconductor nanowires with a diameter in the range of 50 - 500 nm, the nanowires being oriented perpendicular to the surface of the substrate and with a homogeneous distribution on the surface of the semiconductor wafer.