dc.contributor.author | MONAICO, Elena | |
dc.contributor.author | MONAICO, Eduard | |
dc.contributor.author | URSAKI, Veaceslav | |
dc.contributor.author | TIGINYANU, Ion | |
dc.date.accessioned | 2022-05-24T06:55:47Z | |
dc.date.available | 2022-05-24T06:55:47Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | MONAICO, Elena, MONAICO, Eduard, URSAKI, Veaceslav et al. Process for obtaining of semiconductor nanowires in one step via anodization. In: European Exhibition of Creativity and Innovation: proc. of the 13th ed. EUROINVENT, Iasi, Romania, 2021, pp. 181-182. ISSN 2601-4564. e-ISSN 2601-4572. | en_US |
dc.identifier.issn | 2601-4564 | |
dc.identifier.issn | 2601-4572 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/20373 | |
dc.description | Patent application No. 6673/2020. | en_US |
dc.description.abstract | Herein, we propose the technological route via electrochemical etching of bulk GaAs, GaP, and InP substrates for obtaining of a network of semiconductor nanowires with a diameter in the range of 50 - 500 nm, the nanowires being oriented perpendicular to the surface of the substrate and with a homogeneous distribution on the surface of the semiconductor wafer. | en_US |
dc.language | en | |
dc.publisher | Romanian Inventors Forum | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | invenţii | en_US |
dc.subject | inventions | en_US |
dc.subject | gallium arsenide substrates | en_US |
dc.subject | gallium phosphide substrates | en_US |
dc.subject | indium phosphide substrates | en_US |
dc.subject | semiconductor nanowires | en_US |
dc.subject | electrochemical etching | en_US |
dc.subject | semiconductor wafers | en_US |
dc.title | Process for obtaining of semiconductor nanowires in one step via anodization | en_US |
dc.type | Article | en_US |
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