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Process for obtaining of semiconductor nanowires in one step via anodization

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dc.contributor.author MONAICO, Elena
dc.contributor.author MONAICO, Eduard
dc.contributor.author URSAKI, Veaceslav
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2022-05-24T06:55:47Z
dc.date.available 2022-05-24T06:55:47Z
dc.date.issued 2021
dc.identifier.citation MONAICO, Elena, MONAICO, Eduard, URSAKI, Veaceslav et al. Process for obtaining of semiconductor nanowires in one step via anodization. In: European Exhibition of Creativity and Innovation: proc. of the 13th ed. EUROINVENT, Iasi, Romania, 2021, pp. 181-182. ISSN 2601-4564. e-ISSN 2601-4572. en_US
dc.identifier.issn 2601-4564
dc.identifier.issn 2601-4572
dc.identifier.uri http://repository.utm.md/handle/5014/20373
dc.description Patent application No. 6673/2020. en_US
dc.description.abstract Herein, we propose the technological route via electrochemical etching of bulk GaAs, GaP, and InP substrates for obtaining of a network of semiconductor nanowires with a diameter in the range of 50 - 500 nm, the nanowires being oriented perpendicular to the surface of the substrate and with a homogeneous distribution on the surface of the semiconductor wafer. en_US
dc.language en
dc.publisher Romanian Inventors Forum en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject invenţii en_US
dc.subject inventions en_US
dc.subject gallium arsenide substrates en_US
dc.subject gallium phosphide substrates en_US
dc.subject indium phosphide substrates en_US
dc.subject semiconductor nanowires en_US
dc.subject electrochemical etching en_US
dc.subject semiconductor wafers en_US
dc.title Process for obtaining of semiconductor nanowires in one step via anodization en_US
dc.type Article en_US


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    Proceedings of the 13th Edition of European Exhibition of Creativity and Innovation, Romania

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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