IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Author "CARSTENSEN, J."

Browsing Articole din publicaţii internaţionale by Author "CARSTENSEN, J."

Sort by: Order: Results:

  • A comparison of pores in silicon and pores in III–V compound materials 
    CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    This paper compares the morphologies of porous silicon and porous III–V compounds and discusses their growth mechanisms. Looking into the fine structure of pores, in silicon (meso)pores with intercalating octahedra are ...
  • Efficient focusing with a concave lens based on a photonic crystal with an unusual effective index of refraction 
    FOCA, E.; FÖLL, H.; DASCHNER, F.; SERGENTU, V. V.; CARSTENSEN, J.; FREY, S.; KNÖCHEL, R.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    This work reports measurements with a concave lens based on a photonic crystal (PC) structure, which was designed to have an effective index of refraction neff < 1 or even < 0, and which is intended as a model system for ...
  • Electrochemical pore etching in Ge 
    LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on ...
  • Electrochemical pore etching in Ge – An overview 
    FANG, C.; FÖLL, H.; CARSTENSEN, J.; LANGA, S. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    While electrochemical pore etching in semiconductors has become a thriving field for research (and applications) in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a ...
  • Engineering porous III-Vs 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; LÖLKES, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M (ELSEVIER, 2003)
    Porous semiconductors exhibit new and unexpected properties compared to the bulk materials. In III-Vs, many, many new features with respect to optical properties have emerged during the last few years for certain pore ...
  • Engineering the morphology of porous InP for waveguide applications 
    LANGA, S.; LÖLKES, S.; CARSTENSEN, J.; HERMANN, M.; BÖTTGER, G.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    We research the possibilities for engineering the morphology of porous structures in n-InP. Lithographic patterning of the sample surface before anodic etching is shown to modify considerably the electric field distribution ...
  • Fast pore etching 
    FREY, S.; KEMELL, M.; CARSTENSEN, J.; LANGA, S.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The growth of silicon macropores under high current densities and high HF concentrations is studied. A new growth mode for porous Si has been found where pores resemble the so-called current line oriented pores previously ...
  • Focusing effect of photonic crystal concave lenses made from porous dielectrics 
    SERGENTU, V. V.; FOCA, E.; LANGA, S.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2004)
    In the present paper we show the photonic band structure and transmittance spectra of photonic crystal (PC) consisting of porous dielectric and compare the results with the earlier published. Frequency ranges, where PC can ...
  • Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III–V semiconductors 
    FANG, C.; FOCA, E.; SIRBU, L.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO4 mixed ...
  • Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 1999)
    Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented ...
  • Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2002)
    The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of ...
  • Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors 
    COJOCARU, A.; FOCA, E.; CARSTENSEN, J.; LEISNER, M.; TIGINYANU, I. M.; FÖLL, H. (Springer, Berlin, Heidelberg, 2009)
    This work shows new results towards a better understanding of macropore growth in semiconductor phenomenology by using in-situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In ...
  • Large area etching for porous semiconductors 
    CARSTENSEN, J.; CHRISTOPHERSEN, M.; LÖLKES, S.; OSSEI-WUSU, E.; BAHR, J.; LANGA, S.; POPKIROV, G.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    While electrochemical etching of small samples in the 1 cm region is relatively easy, this is not true for large areas, i.e. standard wafer sizes up to 300 mm. The paper outlines the specific demands and difficulties in ...
  • Morphology and chemical composition microanalysis of 2D and 3D ordered structures on porous InP 
    LANGA, S.; SIRBU, L.; MONAICO, E.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous InP proves to be promising for use in nanotechnologies due to the possibility to fabricate ordered structures like two-dimensional (2D) single crystals of nanopores. The main goal of this paper is to demonstrate ...
  • Nucleation and growth of macro pores on (100) n-type Ge 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The authors investigate the nucleation and growth of macro pores on n-type Ge in the dark and with back side illumination. We show that nucleation on Ge is strongly dependent on the surface defect structure and therefore ...
  • Observation of crossing pores in anodically etched n-GaAs 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • Open-loop-control of pore formation in semiconductor etching 
    CLAUSSEN, J. C.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; LANGA, S.; FOLL, H. (IEEE, 2003)
    Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered ...
  • Pores in III–V semiconductors 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • Porous III–V compound semiconductors: formation, properties, and comparison to silicon 
    FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds 
    TIGINYANU, I. M.; LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; SERGENTU, V.; FOCA, E.; RIOS, O.; FÖLL, H. (Cambridge University Press, 2001)
    Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore ...

Search DSpace


Browse

My Account