dc.contributor.author | LUPAN, Oleg | |
dc.contributor.author | PAUPORTÉ, Thierry | |
dc.contributor.author | VIANA, Bruno | |
dc.date.accessioned | 2020-06-01T08:39:34Z | |
dc.date.available | 2020-06-01T08:39:34Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | LUPAN, Oleg, PAUPORTÉ, Thierry, VIANA, Bruno. Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes. In: Advanced Materials, 2010, V. 22, pp. 3298-3302. ISSN 1521-4095. | en_US |
dc.identifier.issn | 1521-4095 | |
dc.identifier.uri | https://doi.org/10.1002/adma.201000611 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8527 | |
dc.description | Access full text - https://doi.org/10.1002/adma.201000611 | en_US |
dc.description.abstract | UV LEDs : The fabrication of an ITO/ZnO-nanowires/p-GaN/In-Ga LED structure is reported with an active emitting layer made of high-quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 °C). A narrow ultra-violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V. | en_US |
dc.language.iso | ro | en_US |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | light-emitting diodes | en_US |
dc.subject | diodes | en_US |
dc.subject | zinc oxide | en_US |
dc.subject | inorganic nanowires | en_US |
dc.subject | electroluminescence | en_US |
dc.title | Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes | en_US |
dc.type | Article | en_US |
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