Quantum wells parameters of In0,3Ga0,7As/GaAs VCSEL lasers

DOROGAN, A.; DOROGAN, V.; MEREUTA, A.; SYRBU, A.; SYRBU, N.; VIERU, T.; URSAKI, V.; ZALAMAI, V.

dc.contributor.author	DOROGAN, A.
dc.contributor.author	DOROGAN, V.
dc.contributor.author	MEREUTA, A.
dc.contributor.author	SYRBU, A.
dc.contributor.author	SYRBU, N.
dc.contributor.author	VIERU, T.
dc.contributor.author	URSAKI, V.
dc.contributor.author	ZALAMAI, V.
dc.date.accessioned	2020-09-08T10:34:34Z
dc.date.available	2020-09-08T10:34:34Z
dc.date.issued	2012
dc.identifier.citation	DOROGAN, A., DOROGAN, V., MEREUTA, A. Quantum wells parameters of In0,3Ga0,7As/GaAs VCSEL lasers. In: Materials Science and Condensed Matter Physics: mater. a 6-a conf. intern., 11-14 septembrie, 2012. Chişinău, 2012, p. 196. ISBN 978-9975-66-290-1.	en_US
dc.identifier.isbn	978-9975-66-290-1
dc.identifier.uri	http://repository.utm.md/handle/5014/9296
dc.description	Sursa: Conferința –"Materials Science and Condensed Matter Physics", Chișinău, Moldova, 11-14 septembrie 2012.→ https://ibn.idsi.md/collection_view/483	en_US
dc.description.abstract	Injection lasers based on quantum well (QW) and quantum dots (QD) heterostructures with a low value of threshold current density Jth with continuous emission regime and output power value of 3W have been manufactured. VCSEL lasers based on In0,3Ga0,7As/GaAs nanostructures are used in different optoelectronic systems and fiber optic communications systems.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată al AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	lasers	en_US
dc.subject	injection lasers	en_US
dc.subject	heterostructures	en_US
dc.subject	optoelectronic systems	en_US
dc.subject	fiber optic communications systems	en_US
dc.title	Quantum wells parameters of In0,3Ga0,7As/GaAs VCSEL lasers	en_US
dc.type	Article	en_US