Conductibility and irradiation stability of single crystals ZnIn2S4

PINTEA, V.; ARAMA, E.; GHEORGHITSA, E.; MACIUGA, A.; ZHITAR, V.

dc.contributor.author	PINTEA, V.
dc.contributor.author	ARAMA, E.
dc.contributor.author	GHEORGHITSA, E.
dc.contributor.author	MACIUGA, A.
dc.contributor.author	ZHITAR, V.
dc.date.accessioned	2020-09-18T07:19:04Z
dc.date.available	2020-09-18T07:19:04Z
dc.date.issued	2014
dc.identifier.citation	PINTEA, V., ARAMA, E., GHEORGHITSA, E., MACIUGA, A., ZHITAR, V. Conductibility and irradiation stability of single crystals ZnIn2S4. In: Moldavian Journal of the Physical Sciences. 2014, vol. 13(1-2), pp. 23-29. ISSN 1810-648X.	en_US
dc.identifier.issn	1810-648X
dc.identifier.uri	http://repository.utm.md/handle/5014/9573
dc.description.abstract	This study presents the results of investigations on the conductivity and irradiation stability of single crystals ZnIn2S4 in a wide range of incident electron energies (3075 keV) and respective doses (10141020 cm2). The possibilities of manufacturing accelerated electron detectors are explored, and their parameters are estimated. Considering that the energy values on the order of 102 keV are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis.	en_US
dc.language.iso	en	en_US
dc.publisher	Academy of Sciences of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	accelerated electron detectors	en_US
dc.subject	single crystals	en_US
dc.subject	semiconductors	en_US
dc.subject	physical properties	en_US
dc.title	Conductibility and irradiation stability of single crystals ZnIn2S4	en_US
dc.type	Article	en_US