Peculiarities of phase transformation in crystalline silicon under local loading

Abstract

The investigation of phase transformation induced by nano- and microindentation of Si (100) under different loading conditions has been carried out in this work. The influence of different loading regimes was considered by using instrumented nano/microindentation technique with continuous registration of loaddisplacement (P-h) curve, as well as by using quasistatic microindentation technique. The effect of different types of indenters was also taken into consideration: Berkovich trihedral diamond pyramid with 150 nm tip rounding for the former technique and Vickers tetrahedral diamond pyramid with 4,5 μm tip rounding for the latter one. The investigation of phase transformation under local loading was studied by means of micro-Raman spectroscopy.